2N2904 2N2904a 2n2905 2n2905a pnp silicon transistors description: the central semiconductor 2N2904, 2n2905 series types are pnp silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) 2N2904 2N2904a symbol 2n2905 2n2905a units collector-base voltage v cbo 60 60 v collector-emitter voltage v ceo 40 60 v emitter-base voltage v ebo 5.0 v continuous collector current i c 0.6 a power dissipation p d 0.8 w power dissipation (t c =25c) p d 3.0 w operating and storage junction temperature t j , t stg -65 to +200 c 2N2904 2N2904a electrical characteristics: (t a =25c) 2n2905 2n2905a symbol test conditions min max min max units i cbo v cb =50v - 20 - 10 na i cev v ce =30v, veb=0.5v - - - 50 na bv cbo i c =10a 60 - 60 - v bv ceo i c =10ma 40 - 60 - v bv ebo i e =10a 5.0 - 5.0 - v v ce(sat) i c =150ma, i b =15ma - 0.4 - 0.4 v v ce(sat) i c =500ma, i b =50ma - 1.6 - 1.6 v v be(sat) i c =150ma, i b =15ma - 1.3 - 1.3 v v be(sat) i c =500ma, i b =50ma - 2.6 - 2.6 v 2N2904 2n2905 2N2904a 2n2905a min max min max h fe v ce =10v, i c =100a (2N2904, 2n2905) 20 - 35 - h fe v ce =10v, i c =100a (2N2904a, 2n2905a) 40 - 75 - h fe v ce =10v, i c =1.0ma (2N2904, 2n2905) 25 - 50 - h fe v ce =10v, i c =1.0ma (2N2904a, 2n2905a) 40 - 100 - h fe v ce =10v, i c =10ma (2N2904, 2n2905) 35 - 75 - h fe v ce =10v, i c =10ma (2N2904a, 2n2905a) 40 - 100 - h fe v ce =10v, i c =150ma 40 120 100 300 h fe v ce =10v, i c =500ma (2N2904, 2n2905) 20 - 30 - h fe v ce =10v, i c =500ma (2N2904a, 2n2905a) 40 - 50 - to-39 case r2 (6-april 2015) www.centralsemi.com
2N2904 2N2904a 2n2905 2n2905a pnp silicon transistors to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min max units f t v ce =20v, i c =50ma, f=100mhz 200 mhz c ob v cb =10v, f=100khz 8.0 pf t on v cc =30v, i c =150ma, i b =15ma 45 ns t off v cc =6.0v, i c =150ma, i b1 =i b2 =15ma 180 ns www.centralsemi.com r2 (6-april 2015)
2N2904 2N2904a 2n2905 2n2905a pnp silicon transistors services ? bonded inventory ? custom electrical screening ? custom electrical characteristic curves ? spice models ? custom packaging ? package base options ? custom device development / multi discrete modules (mdm?) ? bare die available for hybrid applications limitations and damages disclaimer: in no event shall central be liable for any collateral, indirect, punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order or contract or the use of products provided hereunder, regardless of whether central has been advised of the possibility of such damages. excluded damages shall include, but not be restricted to: cost of removal or reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss of use, loss of data, or business interruption. no claim, suit, or action shall be brought against central more than two (2) years after the related cause of action has occurred. in no event shall centrals aggregate liability from any warranty, indemnity, or other obligation arising out of or in connection with a purchase order or contract, or any use of any central product provided hereunder, exceed the total amount paid to central for the specific products sold under a purchase order or contract with respect to which losses or damages are claimed. the existence of more than one (1) claim against the specific products sold to buyer under a purchase order or contract shall not enlarge or extend this limit. buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order or contract and that in the absence of such limitations, the material and economic terms of the purchase order or contract would be substantially different. www.centralsemi.com r2 (6-april 2015)
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